3sk41 Datasheet 2021 Jun 2026

Applying the local oscillator (LO) to Gate 2 and the RF input signal to Gate 1 achieves low-distortion signal mixing.

If you are , tell me if you need help with: Biasing the dual-gate MOSFET Applying Automatic Gain Control (AGC) to G2cap G sub 2 Finding a modern SMD equivalent Share public link

When working with the 3SK41, always refer to the latest datasheet for the most up-to-date specifications and characteristics.

As OEM supplies have dried up, restorers have identified several suitable replacement options, though each comes with its own considerations. 3sk41 datasheet

): A measure of the transconductance. High transconductance indicates excellent signal amplification capabilities. AC / RF Performance Noise Figure ( NFcap N cap F

The dual-gate structure of the 3SK41 makes it highly versatile in discrete RF receiver front-ends:

Restorers of vintage gear report that the 3SK41 is susceptible to several types of failure, most often due to its age and the fragile nature of early MOSFET gates. Applying the local oscillator (LO) to Gate 2

All. Datasheet. Distributor. Manufacturer. 3SK41. 3SK4. Match, Like. No Data. 3SK40(1) 3SK45(2) Start with. No Data. No Data. End. ALLDATASHEET.COM 3SK41 - NEC/HITACHI/MOTOROLA - Jotrin Electronics

Excellent RF/IF amplification profile with low noise parameters.

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Typically utilized for AGC (Automatic Gain Control) voltage or local oscillator input in mixer circuits.

When reviewing the 3SK41 datasheet, the absolute maximum ratings are critical to prevent component failure. Operating beyond these limits can cause permanent damage. Drain-Source Voltage Gate 1-Source Voltage Gate 2-Source Voltage Drain Current Total Power Dissipation Storage Temperature -55 to +150 3. Electrical Characteristics Under typical operating conditions (usually at ), the 3SK41 exhibits the following performance: Forward Transfer Admittance (

| Parameter | Condition | Min | Typ | Max | Unit | | :--- | :--- | :--- | :--- | :--- | :--- | | | VDS=10V, VG1S=0, VG2S=0 | 5 | 15 | 25 | mA | | Gate-Source Cutoff Voltage | VDS=10V, ID=100µA | -0.5 | -1.5 | -3.0 | V | | Forward Transfer Admittance (|Yfs|) | VDS=10V, ID=10mA, f=1kHz | 12 | 20 | 30 | mS | | Input Capacitance (Ciss) | VDS=10V, f=1MHz | - | 3.5 | 5.0 | pF | | Reverse Transfer Capacitance (Crss) | VDS=10V, f=1MHz | - | 0.03 | 0.1 | pF | | Output Capacitance (Coss) | VDS=10V, f=1MHz | - | 2.0 | 3.0 | pF | | Noise Figure (NF) | f=200MHz, VG2S=4V | - | 3.0 | 5.0 | dB | | Power Gain (Gps) | f=200MHz, VG2S=4V | 18 | 22 | - | dB | ): A measure of the transconductance